NTLJF4156N
TYPICAL SCHOTTKY PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
10
10
1.0
T J = 85 ° C
T J = 125 ° C
T J = 25 ° C
1.0
T J = 85 ° C
T J = ?55 ° C
T J = 125 ° C
T J = 25 ° C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
1.0E+0
100E?3
1.0E+0
100E?3
V F , MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 14. Maximum Forward Voltage
10E?3
10E?3
T J = 125 ° C
1.0E?3
100E?6
10E?6
1.0E?6
T J = 125 ° C
T J = 85 ° C
T J = 25 ° C
1.0E?3
100E?6
10E?6
1.0E?6
T J = 85 ° C
T J = 25 ° C
100E?9
0
10
20
30
100E?9
0
10
20
30
V R , REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
ORDERING INFORMATION
V R , REVERSE VOLTAGE (VOLTS)
Figure 16. Maximum Reverse Current
Device
NTLJF4156NT1G
NTLJF4156NTAG
Package
WDFN6
(Pb?Free)
WDFN6
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
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相关代理商/技术参数
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NTLJS1102P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTAG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJS1102PTBG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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